The IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling.
Duy Nguyen delivered a talk titled "Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations", presenting the results achieved by the NanoElectronic Devices and Circuit group of the University of Udine. By using a modelling framework consisting of NEGF-based ab-initio simulations, the team investigated the operation and design of Dirac-Source FETs (DSFETs). This work addresses and clarifies several physical and design aspects of DSFETs, the device concept at the core of the Horizon Europe project AttoSwitch.
