In Sept. 2024 David Esseni (UNIUD) visited the Department of Electrical and Computer Engineering at NUS, and on 19 Sep 2024 he gave a seminar entitled “Steep-slope and Dirac-source FETs for ultra-low-voltage and low-energy CMOS circuits”. In this seminar, the speaker introduced the working principles of Dirac Source FET (DSFET), as a novel concept of steep-slope transistor. The seminar highlighted also the differences between DSFETs and Tunnel FETs, whereby in DSFETs the sub-thermionic transport mechanism in DS-FETs does not rely on tunnelling, with possible advantages compared to Tunnel FETs in terms of on-state current.