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Seminar at the National University of Singapore (NUS) about Steep-slope and Dirac-source FETs

2024-10-02 15:51

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Seminar at the National University of Singapore (NUS) about Steep-slope and Dirac-source FETs

David Esseni (UNIUD) visited the Department of Electrical and Computer Engineering at NUS, and gave a seminar about Dirac-source FETs.

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In Sept. 2024 David Esseni (UNIUD) visited the Department of Electrical and Computer Engineering at NUS, and on 19 Sep 2024 he gave a seminar entitled “Steep-slope and Dirac-source FETs for ultra-low-voltage and low-energy CMOS circuits”.  In this seminar, the speaker introduced the working principles of Dirac Source FET (DSFET), as a novel concept of steep-slope transistor. The seminar highlighted also the differences between DSFETs and Tunnel FETs, whereby in DSFETs the sub-thermionic transport mechanism in DS-FETs does not rely on tunnelling, with possible advantages compared to Tunnel FETs in terms of on-state current.

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